Abstract: Chiplet-based designs using 2.5-D advanced packaging offer advantages in cost and flexibility over monolithic system-on-chip (SoC), enabling heterogeneous integration. However, the high ...
Abstract: The gallium-nitride (GaN) high-electron-mobility transistors (HEMT) devices have great potential for high-power, high-temperature, and high-frequency applications. However, it is challenging ...
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