Abstract: In this study, an optimized metal-ferroelectric –semiconductor (MFS) stack containing a La-doped HfO2(HLO) ferroelectric (FE) layer and an N-doped TiO2 (NTO) channel is proposed and used to ...
Abstract: A HfO2 -SiO2 hybrid bonding technology applied for three-dimensional memristor integration is developed, and the bonding mechanism is deeply studied. This bonding method mainly includes ...
Institute for Microelectronics and Microsystems (IMM), Unit of Agrate Brianza, National Research Council of Italy (CNR), via C. Olivetti 2, Agrate Brianza 20864, Italy ...
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