While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...

This application note describes the basic characteristics and operating performance of IGBTs. It is intended to give the reader a thorough background on the device technology behind IXYS IGBTs. The ...

Efficient Power Conversion (EPC) is aiming at USB chargers and thin point-of-load converters with a 40V 3mΩ enhancement-mode GaN power transistor. Called EPC2055 it is a “good example of the rapid ...

For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5-nanometer ...