The 3,300- and 2,300-V SiC products from Navitas employ advanced planar device structures and packaging to augment efficiency ...

By using these parts in bare die form, Apex has been able to increase the levels of integration offered by these power modules. According to a study commissioned by the company, such modules are ...

Santa Clara, CA and Kyoto, Japan, Sept. 16, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of the DOT-247, a new 2-in-1 SiC molded module (SCZ40xxDTx, SCZ40xxKTx) designed ...

These four SiC modules leverage Qorvo’s unique cascode configuration, which minimizes R DS(on) and switching losses to maximize efficiency, especially in soft-switching applications, Qorvo said. In ...

Dublin, Dec. 30, 2021 (GLOBE NEWSWIRE) -- The "Global Silicon Carbide Market with COVID-19 Impact Analysis by Device(SiC Discrete, SiC Bare Die, and SiC Module), Wafer Size, Application, Vertical ...

Silicon carbide (SiC) power devices have been commercially available for ten years. During that time, there has been a steady increase in voltage ratings to 1,200 V and 1,700 V for SiC-Schottky diodes ...

NUREMBERG, Germany--(BUSINESS WIRE)--PCIM Europe – Power Integrations (NASDAQ: POWI), the leader in gate driver technology for medium- and high-voltage inverter applications, today announced the SCALE ...

Cree, Inc. releases the industry's first fully qualified SiC MOSFET power devices in "bare die" or chip form for use in power electronics modules. Cree's SiC Z-FET MOSFETs and diodes are used in ...

Silicon carbide chip company SemiQ has begun a known-good-die screening program for SiC mosfets “that delivers electrically sorted and optically inspected SiC technology ready for back-end processing ...

STMicroelectronics, a global semiconductor company will supply BorgWarner the latest third generation 750V silicon carbide (SiC) power MOSFETs dice for their proprietary Viper-based power module. This ...