In logic devices such as finFETs (field-effect transistors), metal gate parasitic capacitance can negatively impact electrical performance. One way to reduce this parasitic capacitance is to optimize ...
A new technical paper titled “Novel STI Technology for Enhancing Reliability of High-k/Metal Gate DRAM” was published by researchers at Sungkyunkwan University and Samsung Electronics. “The challenges ...
A large steel gate takes shape as clean welds lock each section into perfect alignment. This custom fabrication balances ...