A SPICE model based on the BSIM3 core eliminates shortcomings in the existing level 1 and level 3 subcircuit models, enabling better simulation of trench-type power MOSFETs. An improved SPICE model ...
According to precedence, MOSFET datasheets show output capacitance at a single measured voltage. While these values were good enough for relative comparison between products in the past, it is ...
Figure 1 shows the analyzed MV 30mH inductor. It has been rated at the level of 10 A and is based on the nanocrystalline magnetic core. Double pulse test in the laboratory circuit diagram is shown in ...
High-voltage MOSFETs are indispensable components in power electronics, where they are required to manage substantial voltages with high efficiency and reliability ...
The switching speed of a power MOSFET charge-controlled device depends on the speed with which an associated gate driver circuit can charge its input capacitance. For the last 20 years, many excellent ...
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