Spin-orbit transfer magnetic random-access memory (SOT-MRAM) is becoming more visible in next-generation memory offerings for its faster write speeds and much longer endurance. Two recent ...
Scientists maximize the efficiency of hafnia-based ferroelectric memory devices. A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the ...
Scientists want to replace electrons with so-called 'nanobubbles' — or skyrmions — to store data more densely and efficiently in advanced components that would replace RAM and flash storage. When you ...
A layered transistor design combines light detection optical memory and neuromorphic processing in one unit offering compact and efficient artificial vision hardware. (Nanowerk Spotlight) Artificial ...
AI training data sets are constantly growing, driving the need for hardware accelerators capable of handling terabyte-scale bandwidth. Among the array of memory technologies available, High Bandwidth ...
For several decades, the semiconductor industry has been looking for alternative memory technologies to fill the gap between dynamic random-access memory (DRAM), the compute system’s main memory, and ...
TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling (1) new Universal Flash Storage (2) (UFS) Ver. 4.1 embedded memory devices ...
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